| PART |
Description |
Maker |
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| RU1DGF |
Ultra Fast Recovery Pack: DO-41
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:600V CURRENT: 1.0A
|
Gulf Semiconductor
|
| RU20JGF |
Ultra Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 2.0A
|
Gulf Semiconductor
|
| STGW40NC60WD GW40NC60WD |
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| STGE50NC60WD |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
|
STMicroelectronics
|
| STGW30NC60W GP30NC60W GW30NC60W STGP30NC60W -GW30N |
N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| 10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
| CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| ES1A ES1B ES1C ES1D ES1G ES1J |
Super Fast Recovery Pack: SMA
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞 1.0A
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT 1.0A
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?1.0A
|
Gulf Semiconductor
|
| SPMQ613-02TXV |
400 A, 600 V, N-CHANNEL IGBT HERMETIC SEALED PACKAGE-8
600V, 400A FAST SWITCHING IGBT HALF BRIDGE
|
Solid State Devices, Inc.
Solid States Devices, Inc
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
